I. ISSUED PATENTS
  1. H.-S. Lan, D. Sathaiya Mahaveer, T.-M. Shen, Z. Wu, "Semiconductor device structure with channel and method for forming the same", Granted No. US 11843032B2, Dec. 12, 2023
  2. H.-S. Lan, C. W. Liu, C.-W. Liu, S.-H. Huang, I-H. Wong, H.-Y. Yeh, C.-En Tsai, "Semiconductor device and method of manufacturing thereof", Granted No. US 11631768B2, Apr. 18, 2023
  3. H.-S. Lan, C. W. Liu, C.-W. Liu, S.-H. Huang, I-H. Wong, H.-Y. Yeh, C.-En Tsai, "Semiconductor device and method for manufacturing the same", Granted No. TW I757272B, Mar. 11, 2022; Granted No. CN 107230729B, Apr. 19, 2022
  4. I-H. Wong, Samuel C. Pan, C.-W. Liu, H.-S. Lan, C.-E. Tsai, F.-L. Lu, “Semiconductor device and manufacturing method thereof,” Granted No. US 10332985B2, Jun. 25, 2019; Granted No. TW I681463B, Jan. 1, 2020; Granted No. US 10957784B2, Mar. 23, 2021; Granted No. CN 109427593B, Nov. 2, 2021
  5. H.-S. Lan, C. W. Liu, C.-W. Liu, S.-H. Huang, I-H. Wong, H.-Y. Yeh, C.-En Tsai, “Semiconductor device having stressor layer,” Granted No. US 10340383B2, Jul. 2, 2019
II. JOURNAL PUBLICATIONS
  1. Chung-Yi Lin, Hung-Yu Ye, Fang-Liang Lu, H.-S. Lan, and C. W. Liu, “Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well,” Vol. 8, pp.2795-2802, Opt. Mater. Express, 2018. (SCI)
  2. H.-S. Lan and C. W. Liu, “Valence band structure calculations of strained Ge1-xSnx quantum well pFETs,” e-print arXiv:1703.01812, 2017 [synopsis]
  3. Yu-Shiang Huang, Y.-J. Tsou, C.-H. Huang, C.-H. Huang, H.-S. Lan, C. W. Liu, Y.-C. Huang, H. Chung, C.-P. Chang, S. S. Chu, and S. Kuppurao, “High Mobility CVD-grown Ge/Strained Ge0.9Sn0.1/Ge Quantum Well pMOSFETs on Si by Optimizing Ge Cap Thickness,” Vol. 64, No.6, pp.2498-2504, IEEE Trans. Electron Device, 2017. (SCI)
  4. H.-S. Lan, S. T. Chang, and C. W. Liu, “Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys,” 95, 201201(R), Phys. Rev. B, 2017. (SCI) e-print arXiv:1612.00159
  5. H.-S. Lan, and C. W. Liu, “Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces,” 50, 13LT02, J. Phys. D: Appl. Phys., 2017. (SCI) [synopsis]
  6. P.-S. Chen, S.-T. Fan, H.-S. Lan, and C. W. Liu, “Band Calculation of Lonsdaleite Ge,” 50, 015107, J. Phys. D: Appl. Phys., 2017. (SCI)
  7. Hung-Yu Ye, H.-S. Lan, and C. W. Liu, “Electron Mobility in Junctionless Ge Nanowire NFETs,” Vol. 63, No.11, pp.4191-4195, IEEE Trans. Electron Device, 2016. (SCI)
  8. H.-S. Lan and C. W. Liu, “Hole Effective Mass of Strained Ge1-xSnx Alloys P-Channel Quantum-Well MOSFETs on (001), (110), and (111) Ge Substrates,” ECS Transactions (also presented at the ECS SiGe, Ge, and Related Compounds Symposium), Vol. 75, no. 8, pp.571-578, 2016. (EI) 
  9. Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, H.-S. Lan, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, M.-T. Yang and C. W. Liu, “Asymmetric Keep-out Zone of Through-Silicon Via using 28nm Technology Node”, IEEE Electron Device Letter, Vol. 36, No. 9, pp. 938-940, 2015. (SCI)
  10. ​H.-S. Lan and C. W. Liu, “Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors”, Appl. Phys. Lett., Vol. 104, 192101, 2014. (SCI)
  11. H.-S. Lan, Y.-T. Chen, J.-Y. Lin, and C. W. Liu, “Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain”, ECS Transactions (also presented at the ECS SiGe, Ge, and Related Compounds Symposium), vol. 50, no. 9, pp.151-155, 2013. (EI)
  12. H. -C. Chang, S. -C. Lu, W. -C. Chang, T. -P. Chou, H. -S. Lan, C. -M. Lin, and C. W. Liu, “Theoretical and Experimental Demonstration of Electronic State of GeO2”, ECS Transactions, vol. 41, no. 3, pp.53-58, 2011. (EI)
  13. H.-S. Lan, Y.-T. Chen, Hung-Chih Chang, J.-Y. Lin, William Hsu, W. -C. Chang, and C. W. Liu, "Electron scattering in Ge metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., Vol. 99, 112109, 2011. (SCI)
  14. Y.-T. Chen, H.-S. Lan, W. Hsu, Y.-C. Fu, J.-Y. Lin, and C. W. Liu, "Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates," Appl. Phys. Lett., Vol. 99, 022106, 2011. (SCI)
  15. H.-S. Lan, S. -T. Chan and T. -H. Cheng, C. -Y. Chen and S. -R. Jan and C. W. Liu, “Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers” Appl. Phys. Lett., Vol. 98, 101106, 2011. (SCI)
  16. T. -H. Cheng, K. -L. Peng, C. -Y. Ko, C. -Y. Chen, H.-S. Lan, Y. -R. Wu, C. W. Liu, and H. -H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett., Vol. 96, 211108, 2010. ​​(SCI)
​III. CONFERENCE PUBLICATIONS
  1. Hung-Yu Ye, Chia-Che Chung, I-Hsieh Wong, H.-S. Lan, C. W. Liu, “Mobility Calculation of Ge Nanowire Junctionless NFETs with Size and Geometry Dependence” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2018.
  2. Yu-Shiang Huang, C.-H. Huang, F.-L. Lu, C.-Y. Lin, H.-Y. Ye, I-H. Wong, S.-R. Jan, H.-S. Lan, C. W. Liu, Y.-C. Huang, H. Chung, C.-P. Chang, S. S. Chu, and S. Kuppurao, “Record High Mobility (428 cm2/V-s) of CVD-grown Ge/Strained Ge0.91Sn0.09/Ge Quantum Well p-MOSFETs,” p.33.1.1-33.1.4, International Electron Devices Meeting (IEDM), 2016
  3. I-Hsieh Wong, S.-H. Huang, F.-L. Lu, H.-Y. Ye, C.-T. Lu, J.-Y. Yan, Y.-C. Shen, Y.-J. Peng, H.-S. Lan, and C. W. Liu, “High Performance Ge Junctionless Gate-all-around NFETs with Simultaneous Ion =1235 μA/μm at VOV=VDS=1V, SS=95 mV/dec, high Ion/Ioff=2x106, and Reduced Noise Power Density using S/D Dopant Recovery by Selective Laser Annealing,” p.33.6.1-33.6.4, International Electron Devices Meeting (IEDM), 2016.
  4. H.-S. Lan, and C. W. Liu, “Hole Effective Mass of Strained Ge1-xSnx Alloys P-Channel Quantum-Well MOSFETs on (001), (110), and (111) Ge Substrates,” 230th Meeting of Electrochemical Society, Honolulu, HI, Oct. 2-7, 2016.
  5. Y.-S. Huang, C.-H. Huang, C. –H. Huang, F. –L. Lu, D.-Z. Chang, C.-Y. Lin, I. -H. Wong, S. R. Jan, H.-S. Lan, C. W. Liu, Y. –C. Huang, H. Chung, C.-P. Chang, S. S. Chu, S. Kuppurao, “Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs”, 2016 Silicon Nanoelectronics Workshop (SNW), Honolulu HI, USA, June 12-13, 2016.
  6. Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, H.-S. Lan, C. W. Liu, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, and M.-T. Yang, “Compact Modeling and Simulation of TSV with Experimental Verification” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2016.
  7. I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen, Tai-Cheng Shieh, Tzu-Yao Lin, H.-S. Lan, and C. W. Liu, “In-situ Doped and Tensily Stained Ge Junctionless Gate-all-around nFETs on SOI Featuring Ion = 828 uA/um, Ion/Ioff ~ 1E5, DIBL= 16-54 mV/V, and 1.4X External Strain Enhancement” p.9.6.1-9.6.4, International Electron Devices Meeting (IEDM), 2014.
  8. H.-S. Lan, and C. W. Liu, “Electron Ballistic Current Enhancement of Ge1-xSnx FinFETs”  International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2014.
  9. Cheng-Ming Lin, Hung-Chih Chang, Yen-Ting Chen, I-Hsieh Wong, H.-S. Lan, Shih-Jan Luo, Jing-Yi Lin, Yi-Jen Tseng, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ~43, ~2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response,” p.23.2.1-23.2.4, International Electron Devices Meeting (IEDM), 2012.
  10. H.-S. Lan, Y. –T. Chen, J. –Y. Lin, and C. W. Liu, “Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain”, 222th Meeting of Electrochemical Society, Honolulu, HI, Oct. 7-12, 2012.
  11. C. W. Liu, H.-S. Lan, and Y.-T. Chen, “Electron scattering in Ge metal-oxide-semiconductor field-effect transistors and mobility strain response,” CSTIC, Shanghai, China, Mar. 19, 2012.
  12. H.-C. Chang, S. -C. Lu, W. -C. Chang, T. -P. Chou, H.-S. Lan, C. -M. Lin, and C. W. Liu, “Theoretical and Experimental Demonstration of Electronic State of GeO2”, 220th Meeting of Electrochemical Society, Boston, Massachusetts, Oct. 9-14, 2011.
  13. H.-S. Lan, S. -T. Chan, T. -H. Cheng, C. -Y. Chen, S. -R. Jan and C. W. Liu, “Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers,” 18th Symposium on Nano Device Technology (SNDT), April 21-22, Hsinchu, Taiwan, 2011.
  14. Yen-Ting Chen, H.-S. Lan, William Hsu, Yen-Chun Fu, Hung-Chih Chang, Cheng-Ming Lin and C. W. Liu, “High Performance Ge n-MOSFETs on (001) substrates with uniaxial strain response,” 18th Symposium on Nano Device Technology (SNDT), April 21-22, Hsinchu, Taiwan, 2011.
  15. Yen Chun Fu, William Hsu, Yen-Ting Chen, H.-S. Lan, Cheng-Han Lee, Hung-Chih Chang, Hou-Yun Lee, Guang-Li Luo, Chao-Hsin Chien, C. W. Liu, Chenming Hu, and Fu-Liang Yang “ High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response,” p.18.5.1-18.5.4, International Electron Devices Meeting (IEDM), 2010.
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