In the past few decades, semiconductors play an irreplaceable role to open the IT area creating a borderless world through Internet and electronic devices. Though, the DT area is becoming a popularity blue sea over the IT area, and the high efficiency and low power consumption devices which are fabricated by semiconductor technologies are the essential role to make everything (AI, VR/AR/MR, Server, etc.) moving forward. However, the Si industries also enter the Post-Moore's Law world today owing to the scaling rules facing their physical limitations. Carrier Mobility is an important indicator of high Ion CMOS transistors. One of the possible solutions to enhance device performance is to replace the current Si channel by high mobility semiconductors. To study and simulate band structures and carrier transport properties of potential alternative channel materials with quite convincingly results based on basic but important consideration physics are Dr. Lan's research of interest.
My Research is related to the In-House Programming,
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BAND THEORIES
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BULK
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NFETs
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PFETs
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Research Topics include:
- Band structure properties: Band gap energy, effective mass, band alignment of hetero-structures, phonon dispersion, exciton binding energy, and strain effect.
- Photoluminescence studies: PL fitting and exciton emission fitting.
- Band edge models: Deformation potential method and 6x6 k·p method (Hole band only).
- Full band models: 30x30 k·p method, and Empirical pseudopotential method.
- Band alignment: Model-Solid theory.
- Involved Phonon: Adiabatic bond charge model and so called Allen-Heine-Cardona Theory.
- Photoluminescence Fitting: Electron-hole plasma recombination model, Exciton recombination with tail state model, and Excitonic binding energy calculations.
- Band gap energy, phonon frequency, and band offset energy with strain effect.
- PL spectrum with temperature effect.
Research Topics include:
Developed/Developing Programs include:
Calibrated/Calibrating Models with Experimental Results:
- Electron Drift/Hall bulk mobility: involved phonon and impurity scatterings.
Developed/Developing Programs include:
- Scattering mechanisms: phonon and impurity scatterings.
Calibrated/Calibrating Models with Experimental Results:
- Drift/Hall electron mobility.
Research Topics include:
- Mobility calculations: planar, ultra-thin body, double gate, FinFETs, tri-gate, GAA, and NW in consideration of different orientation/channel/stress direction.
- Ballistic current calculations: double gate and FinFETs in consideration of different orientation/channel/stress direction.
- Poisson-Schrödinger solvers:
- 1D solvers of finite barriers of metal/oxide/channel band diagrams (planar, UTB, DG, and QW).
- 2D solvers of finite barriers of metal/oxide/channel band diagrams (FinFET, tri-gate, GAA, and NW).
- Scattering mechanisms:
- Intervalley phonon (Δ, L, and Γ), remote phonon (High-κ) scatterings.
- Green function solved in coulomb potential (Dit and impurity).
- Interface roughness (single gate and DG), and alloy scatterings.
- Mobilities of transistors with strain responses.
- Injection velocities of transistors.
Research Topics include:
- Mobility calculations: planar, ultra-thin body, and double gate in consideration of different orientation/channel/stress direction.
- Poisson-Schrödinger solvers:
- 1D solvers of infinite barriers of channel band diagrams (planar, UTB, DG, and QW) with 6x6 k·p modeling.
- Scattering mechanisms:
- Intraband and interband phonon scatterings.
- Green function solved in coulomb potential (Dit and impurity).
- Interface roughness (single gate and DG), and alloy scatterings.
- Mobilities of transistors with strain responses.
Copyright © 2015-2017 H.-S. Lan
